Frequency exponent
Source drain junction saturation density
W0
Unit
Power of width dependence for width offset
distance source to bulk contact
The following two groups are used to model the AC and noise behavior of the MOS transistor. DWB
Unit
1
m
Parameter for smoothness of effective Vds calculation
If unspecified, ground is used.
4.
Default Value(NMOS/PMOS)
m
DVT1W
Gate bias effect coefficient of RDSW
For the current controlled switch, the controlling current is that through the specified voltage source. CJSWG
Gate oxide thickness
This means that the model will mimic the op amp functionality, but will not have any transistor or any other semiconductor SPICE models. m
A0
NFACTOR
XJ
5.0E-10
NOFF
NJ
bulk sheet resistance
next["up"] = "wwhgifs/nextup.gif"; The model parameters of the BSIM3v3 model can be divided into several groups. 2 Spice-Modell als Subcircuit einbinden 8 2016, Prof. Dr.-Ing. PSCBE1
Vm
nD, nG, nS, and nB are the drain, gate, source, and bulk (substrate) nodes, respectively.
Subthreshold swing factor for CV model
WINT
2.2
TPBSWG
next["over"] = "wwhgifs/nextover.gif";
V/K
Circuit simulation is an important part of any design process. Capacitance model
30
The direction of positive controlling current flow is from the positive node, through the source, to the negative node of Vname.
Default Value
m
DWG
Second coefficient of short-channel effect on VTH
-4.65E-11
KT1
Mobility model
Mname is the model name, Area is the area factor, and OFF indicates an (optional) initial condition on the device for dc analysis. DLC
The default values of the magnitude and phase are 1.0 and 0.0 respectively. 0
0.0
The third group of parameters are the temperature modeling parameters. AD8017 SPICE Macro Model. Vname n+ n-

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